(Hong Kong)
Product Summary
The 2N6661JANTX is a kind of N-Channel 90 V (D-S) MOSFET. The typical applications of 2N6661JANTX include: (1)Hi-Rel Systems; (2)Direct Logic-Level Interface: TTL/CMOS; (3)Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.; (4)Battery Operated Systems; (5)Solid-State Relays.
Parametrics
2N6661JANTX absolute maximum ratings: (1)Drain-Source Voltage, VDS: 90V; (2)Gate-Source Voltage, VGS: ± 20V; (3)Continuous Drain Current (TJ = 150 ℃), ID: TC = 25 ℃: 0.86A; TC = 100 ℃: 0.54A; (4)Pulsed Drain Current, IDM: 3A; (5)Maximum Power Dissipation, PD: TC = 25 ℃: 6.25W; TA = 25 ℃ 0.725W; (6)Thermal Resistance, Junction-to-Ambient, RthJA: 170℃/W; (7)Thermal Resistance, Junction-to-Case, RthJC: 20℃/W; (8)Operating Junction and Storage Temperature Range, TJ, Tstg: - 55 to 150 ℃.
Features
2N6661JANTX features: (1)Military Qualified; (2)Low On-Resistence: 3.6Ω; (3)Low Threshold: 1.6 V; (4)Low Input Capacitance: 35 pF; (5)Fast Switching Speed: 6 ns; (6)Low Input and Output Leakage.
Diagrams
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 2N6609 |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 140V 150W PNP |
Data Sheet |
Negotiable |
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2N6609G |
ON Semiconductor |
Transistors Bipolar (BJT) 16A 140V 150W PNP |
Data Sheet |
Negotiable |
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2N6648 |
Other |
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Data Sheet |
Negotiable |
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2N6649 |
Other |
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Data Sheet |
Negotiable |
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2N6650 |
Central Semiconductor |
Transistors Darlington PNP Pwr Darlington |
Data Sheet |
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2N6653 |
Other |
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Data Sheet |
Negotiable |
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