(Hong Kong)
Product Summary
The HY62V8100ALLT185I is a high speed, low power and 1M bit CMOS SRAM organized as 131,072 words by 8bit. The HY62V8100ALLT185I uses high performance CMOS process technology and designed for high speed low power circuit technology. The HY62V8100ALLT185I is particulary well suited for used in high density low power system application. The HY62V8100ALLT185I has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0V.
Parametrics
HY62V8100ALLT185I absolute maximum ratings: (1)Vcc, VIN, VOUT Power Supply, Input/Output Voltage: -0.3 to 4.6 V; (2)TSTG Storage Temperature: -65 to 125 ℃; (3)PD Power Dissipation: 1.0 W; (4)IOUT Data Output Current: 50 mA; (5)TSOLDER Lead Soldering Temperature & Time: 260 · 10 ℃·sec.
Features
HY62V8100ALLT185I features: (1)Fully static operation and Tri-state output; (2)TTL compatible inputs and outputs; (3)Battery backup(LL-part); (4)2.0V(min) data retention; (5)Standard pin configuration: 32 SOP - 525mil; 32 TSOP-I - 8X20(Standard and Reversed); 32 sTSOP-I - 8X13.4 (Standard and Reversed).
Diagrams
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