(Hong Kong)
Product Summary
The IDT7164L55DB is a 65,536 bit high-speed static RAM organized as 8K x 8. The device is fabricated using IDT’s high-performance, high-reliability CMOS technology. Address access times as fast as 15ns are available and the circuit offers a reduced power standby mode. When CS1 goes HIGH or CS2 goes LOW, the IDT7164L55DB will automatically go to, and remain in, a low-power stand by mode. The IDT7164L55DB is packaged in a 28-pin 300 mil DIP and SOJ; and 28-pin 600 mil DIP.
Parametrics
IDT7164L55DB absolute maximum ratings: (1)VTERM, Terminal Voltage with Respect to GND: –0.5 to +7.0V; (2)TA, Operating Temperature: 0 to +70℃; (3)TBIAS, Temperature Under Bias: –55 to +125℃; (4)TSTG, Storage Temperature: –55 to +125℃; (5)PT, Power Dissipation: 1.0W; (6)IOUT, DC Output Current: 50mA.
Features
IDT7164L55DB features: (1)High-speed address/chip select access time: Military: 20/25/30/35/45/55/70/85ns (max.); Commercial: 15/20/25/35/70ns (max.); (2)Low power consumption; (3)Battery backup operation — 2V data retention voltage (L Version only); (4)Produced with advanced CMOS high-performance technology; (5)Inputs and outputs directly TTL-compatible; (6)Three-state outputs; (7)Available in 28-pin DIP and SOJ; (8)Military product compliant to MIL-STD-883, Class B.
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IC SRAM 64KBIT 15NS 68PLCC |
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IC SRAM 64KBIT 15NS 68PLCC |
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IC SRAM 64KBIT 15NS 68PLCC |
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IC SRAM 64KBIT 15NS 68PLCC |
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