(Hong Kong)
Product Summary
The IDT7187S25DB is a 65,536-bit high-speed static RAM organized as 64K ×1. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. Access times as fast as 25ns are available. The IDT7187S25DB provides two standby modes-ISB and ISB1. ISB provides low-power operation; ISB1 provides ultra-low-power operation.
Parametrics
IDT7187S25DB absolute maximum ratings: (1)VTERM, Terminal Voltage with Respect to GND: –0.5 to +7.0 V; (2)TA, Operating Temperature: 0 to +70℃; (3)TBIAS, Temperature Under Bias: –55 to +125℃; (4)TSTG, Storage Temperature:–55 to +125 ℃; (5)PT, Power Dissipation: 1.0W; (6)IOUT, DC Output Current: 50mA.
Features
IDT7187S25DB features: (1)High speed (equal access and cycle time), Military: 25/35/45/55/70/85ns (max.); (2)Low power consumption; (3)Battery backup operation-2V data retention (L version only); (4)JEDEC standard high-density 22-pin ceramic DIP, 22-pin leadless chip carrier; (5)Produced with advanced CMOS high-performance technology; (6)Separate data input and output; (7)Input and output directly TTL-compatible; (8)Military product compliant to MIL-STD-883, Class B.
Diagrams
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IC SRAM 64KBIT 15NS 68PLCC |
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IC SRAM 64KBIT 15NS 68PLCC |
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IC SRAM 64KBIT 15NS 68PLCC |
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IC SRAM 64KBIT 15NS 68PLCC |
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