(Hong Kong)
Product Summary
The IRF7303PBF is a Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF7303PBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF7303PBF absolute maximum ratings: (1)ID @ TA = 25℃, 10 sec. Pulsed Drain Current, VGS @ 10V: 5.3A; (2)ID @ TA = 25℃, Continuous Drain Current, VGS @ 10V: 4.9A; (3)ID @ TA = 70℃, Continuous Drain Current, VGS @ 10V: 3.9A; (4)IDM, Pulsed Drain Current: 20 A; (5)PD @TA = 25℃, Power Dissipation: 2.0W; Linear Derating Factor: 0.016 W/℃; (6)VGS, Gate- Source Voltage: ±20 V; (7)dv/dt, Peak Diode Recovery dv/dt: 5.0 V/ns; (8)TJ, TSTG, Junction and Storage Temperature Range: -55 to + 150℃.
Features
IRF7303PBF features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)Dual N-Channel Mosfet; (4)Surface Mount; (5)Available in Tape & Reel; (6)Dynamic dv/dt Rating; (7)Fast Switching; (8)Lead-free.
Diagrams
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 IRF7303PBF |
International Rectifier |
MOSFET |
Data Sheet |
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