(Hong Kong)
Product Summary
The IRFF9130PBF is a power MOSFET transistor. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resistance combined with high transconductance. The IRFF9130PBF transistor also features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. The IRFF9130PBF is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Parametrics
IRFF9130PBF absolute maximum ratings: (1)ID @ VGS = -10V, TC = 25℃, Continuous Drain Current: -6.5A; (2)ID @ VGS = -10V, TC = 100℃ Continuous Drain Current -4.1A; (3)IDM, Pulsed Drain Current: -25A; (4)PD @ TC = 25℃ Max, Power Dissipation: 25W; (5)Linear Derating Factor: 0.20W/℃; (6)VGS, Gate-to-Source Voltage: ±20V; (7)EAS, Single Pulse Avalanche Energy: 92mJ; (8)dv/dt, Peak Diode Recovery dv/dt: -5.5V/ns; (9)TJ, TSTG, Operating Junction Storage Temperature Range: -55 to 150℃; (10)Lead Temperature: 300℃; (11)Weight: 0.98(typical)g.
Features
IRFF9130PBF features: (1)Repetitive Avalanche Ratings; (2)Dynamic dv/dt Rating; (3)Hermetically Sealed; (4)Simple Drive Requirements; (5)Ease of Paralleling.
Diagrams
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