Product Summary

The K6R4008V1DUI10 is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4008V1DUI10 uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The K6R4008V1DUI10 is fabricated using SAMSUNG’s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4008V1DUI10 is packaged in a 400 mil 32-pin plastic SOJ.

Parametrics

K6R4008V1DUI10 absolute maximum ratings: (1)Voltage on Any Pin Relative to VSS:-0.5 to VCC+0.5 V; (2)Voltage on VCC Supply Relative to VSS:-0.5 to 7.0 V; (3)Power Dissipation:1.0 W; (4)Storage Temperature:-65 to 150℃; (5)Operating Temperature:Commercial:0 to 70℃, Industrial:-40 to 85℃.

Features

K6R4008V1DUI10 features: (1)Fast Access Time 10ns(Max.); (2)Low Power Dissipation:Standby (TTL): 20mA(Max.), (CMOS): 5mA(Max.), Single 5.0V±10% Power Supply; (3)TTL Compatible Inputs and Outputs; (4)Fully Static Operation: No Clock or Refresh required ; (5)Three State Outputs; (6)Center Power/Ground Pin Configuration ; (7)Standard Pin Configuration: 32-SOJ-400; (8)Operating in Commercial and Industrial Temperature range.

Diagrams

K6R4008V1DUI10 block diagram

K6R4004C1C-C
K6R4004C1C-C

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K6R4004C1C-E
K6R4004C1C-E

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K6R4004C1C-I
K6R4004C1C-I

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Negotiable 
K6R4004C1D
K6R4004C1D

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Negotiable 
K6R4004V1D
K6R4004V1D

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Negotiable 
K6R4008V1B-C
K6R4008V1B-C

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Negotiable