Product Summary

The K6X4008C1FGF70 is a 512Kx8 bit Low Power and Low Voltage CMOS Static RAM. It is fabricated by SAMSUNG advanced full CMOS process technology. The K6X4008C1FGF70 supports various operating temperature range and have various package types for user flexibility of system design. The K6X4008T1F-GF70 also supports low data retention voltage for battery back-up operation with low data retention current.

Parametrics

K6X4008C1FGF70 absolute maximum ratings: (1)Voltage on any pin relative to Vss: -0.2 to VCC+0.3(max. 3.9V) V; (2)Voltage on Vcc supply relative to Vss: -0.2 to 3.9 V; (3)Power Dissipation: 1.0 W; (4)Storage temperature: -65 to 150 ℃; (5)Operating Temperature: 0 to 70 ℃.

Features

K6X4008C1FGF700 features: (1)Process Technology: Full CMOS; (2)Organization: 512Kx8; (3)Power Supply Voltage: 2.7 to 3.6V; (4)Low Data Retention Voltage: 2V(Min); (5)Three State Outputs; (6)Package Type: 32-SOP-525, 32-TSOP2-400F/R, 32-TSOP1-0813.4Fs.

Diagrams

K6X4008C1FGF70 circuit diagram

K6X4008
K6X4008

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K6X4008C1F-B
K6X4008C1F-B

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K6X4008C1F-BF55
K6X4008C1F-BF55

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K6X4008C1F-F
K6X4008C1F-F

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K6X4008C1F-Q
K6X4008C1F-Q

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Negotiable 
K6X4008C1F-UF55 (ROHS)
K6X4008C1F-UF55 (ROHS)

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Data Sheet

Negotiable