(Hong Kong)
Product Summary
The S29GL256N10TFI010 is a 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The device is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL256N10TFI010 has a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. It can be programmed either in the host system or in standard EPROM programmers.
Parametrics
S29GL256N10TFI010 absolute maximum ratings:(1)Storage Temperature, Plastic Packages: –65℃ to +150℃; (2)Ambient Temperature with Power Applied: –65℃ to +125℃; (3)Voltage with Respect to Ground: VCC: –0.5 V to +4.0 V; VIO: –0.5 V to +4.0 V; A9, OE#, ACC and RESET# : –0.5 V to +12.5 V; All other pins: –0.5 V to +12.5 V.
Features
S29GL256N10TFI010 features: (1)Single power supply operation: 3 volt read, erase, and program operations; (2)Enhanced VersatileI/O. control: All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC; (3)Manufactured on 110 nm MirrorBit process technology; (4)SecSi. (Secured Silicon) Sector region: 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence; May be programmed and locked at the factory or by the customer; (5)Flexible sector architecture: S29GL512N: Five hundred twelve 64 Kword (128 Kbyte) sectors; S29GL256N: Two hundred fifty-six 64 Kword (128 Kbyte) sectors; S29GL128N: One hundred twenty-eight 64 Kword(128 Kbyte) sectors; (6)Compatibility with JEDEC standards: Provides pinout and software compatibility for singlepower supply flash, and superior inadvertent write protection; (7)100,000 erase cycles per sector typical; (8)20-year data retention typical.
Diagrams
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Data Sheet |
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Flash IC 1GIG 3.0V FLSHMEM |
Data Sheet |
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S29GL01GP11FAIR20 |
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Flash 1GB 3.0-3.6V 110ns |
Data Sheet |
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Data Sheet |
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S29GL01GP11FFCR20 |
Spansion |
Flash 1GB 3.0-3.6V 110ns PBF |
Data Sheet |
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