Product Summary

The WS27C256L12TMB is a kind of Military 32K x 8 CMOS EPROM.It is manufactured using an advanced CMOS technology which enables it to operate at speeds up to 120 nsecs. The WS27C256L12TMB was designed utilizing WSI patented self-aligned split gate EPROM cell, resulting in a low power device with a very cost effective die size. The WS27C256L 256K EPROM provides 32K of 8 bit wide code store capacity for DSP, microprocessor, and microcontroller-based systems. Its 120 nsec access time over the full Military temperature range provides the potential of no-wait state operation. And where this parameter is important, the WS27C256L12TMB provides the user with a very fast 35 nsec TOE output enable time.

Parametrics

WS27C256L12TMB absolute maximum ratings: (1)Storage Temperature: –65 to + 150℃; (2)Voltage on any Pin with Respect to Ground: –0.6V to +7V; (3)VPP with Respect to Ground: –0.6V to + 14V; (4)VCC Supply Voltage with Respect to Ground: –0.6V to +7V; (5)ESD Protection: >2000V.

Features

WS27C256L12TMB features: (1)High Performance CMOS: 120 ns Access Time; (2)Ceramic Leadless Chip Carrier (CLLCC); (3)Fast Programming; (4)EPI Processing: Latch-Up Immunity to 200 mA; ESD Protection Exceeds 2000 Volts; (5)DESC SMD No. 5962-86063; (6)300 Mil DIP or Standard 600 Mil DIP; (7)JEDEC Standard Pin Configuration.

Diagrams

WS27C256L12TMB circuit diagram

WS27C010L
WS27C010L
Other

Data Sheet
Negotiable 
WS27C256L
WS27C256L
Other

Data Sheet
Negotiable