Product Summary

The M27128AF1 is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128AF1 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern of the M27128AF1 can then be written to the device by following the programming procedure.

Parametrics

M27128AF1 absolute maximum ratings: (1)TA, Ambient Operating Temperature: grade 1: 0 to 70 ℃, grade 6: –40 to 85 ℃; (2)TBIAS, Temperature Under Bias: grade 1: –10 to 80 ℃, grade 6: –50 to 95 ℃; (3)TSTG, Storage Temperature: –65 to 125 ℃; (4)VIO, Input or Output Voltages: –0.6 to 6.25 V; (5)VCC, Supply Voltage: –0.6 to 6.25 V; (6)VPP, Program Supply: –0.6 to 14 V; (7)VA9, A9 Voltage: –0.6 to 13.5 V.

Features

M27128AF1 features: (1)fast access time: 200ns; (2)extended temperature range; (3)single 5 V supply voltage; (4)low standby current: 40mA max; (5)TTL compatible during read and program; (6)fast programming algorithm; (7)electronic signature; (8)programming voltage: 12V.

Diagrams

M27128AF1 bloc kdiagram

Image Part No Mfg Description Data Sheet Download Pricing
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M27128AF1
M27128AF1

STMicroelectronics

EPROM DISC BY STM 6/01 DIP-28 16KX8 250NS

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M271
M271

Other


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M27128A
M27128A

Other


Data Sheet

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M27128AF1
M27128AF1

STMicroelectronics

EPROM DISC BY STM 6/01 DIP-28 16KX8 250NS

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Negotiable 
M2716
M2716

Other


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M27128A-2F1
M27128A-2F1

STMicroelectronics

EPROM DISC BY STM 6/01 DIP-28 16KX8 200NS

Data Sheet

Negotiable